Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system

Simulation studies are made on the large-signal RF performance and avalanche noise properties of heterojunction double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on Al_xGa_1-xN/GaN material system designed to operate at 1.0 THz frequency. Two different heterojunction DDR structures such as n-Al_0.4Ga_0.6N/p-GaN and n-GaN/p-Al_0.4Ga_0.6N are proposed in this study. The large-signal output power, conversion efficiency and noise properties of the heterojunction DDR IMPATTs are compared with homojunction DDR IMPATT devices based on GaN and Al_0.4Ga_0.6N. The results show that the n-Al_0.4Ga_0.6N/p-GaN heterojunction DDR device not only surpasses the n-GaN/p-Al_0.4Ga_0.6N DDR device but also homojunction DDR IMPATTs based on GaN and Al_0.4Ga_0.6N as regards large-signal conversion efficiency, power output and avalanche noise performance at 1.0 THz.     

Photovoltaic performance of Organic Photovoltaics for indoor energy harvester

Wireless sensor network becomes widespread into home and offices to keep them comfort and save the energy. The battery-less wireless sensor nodes need the high performance indoor solar cells for stable and sustainable operation. Organic Photovoltaics (OPV) has great indoor photovoltaic performance because ultra-thin organic layer has strong absorption against the UV–visible spectrum that is good spectral matching with indoor lightings. In this study, OPV module has 8 cells in series and same size as the conventional amorphous silicon solar cells (a-Si) for indoor light harvesting. OPV and a-Si are measured their photovoltaic performance under the fluorescent light and demonstrated for energy harvester of wireless sensor network. The output power of OPV and a-Si is 43.4 μW cm⁻² and 28.5 μW cm⁻² at fluorescent light 1000lux respectively. The data transmission rate of the wireless sensor node driven by OPV is 30–40% improved under the dim light condition compared to a-Si.     

The global avalanche characteristics of two Boolean functions and algebraic immunity

The global avalanche characteristics criterion of two Boolean functions was introduced by Zhou et al. [On the global avalanche characteristics criterion of two Boolean functions and the higher order nonlinearity, Inform. Sci. 180(2) (2010), pp. 256–265] to measure the cryptographic behaviour in a global characteristic. The two indicators σ _{f, g} and Δ _{f, g} of Boolean functions f and g were presented. In this paper, a new upper bound on σ _{f, g} is derived, and a technique on constructing Boolean functions to attain the lower bound on the sum-of-squares indicator is described by using the disjoint spectra method. Some new upper bounds on Δ _{f, g} and σ _{f, g} are deduced for two special Boolean functions. Two relationships between σ _{f, g} and algebraic immunity of the two Boolean functions are obtained. Finally, some links among different cryptographic indicators are shown.     

4H-SiC 雪崩光电探测器中倍增层参数的优化模拟

应用ATLAS模拟软件,设计了吸收层和倍增层分离的（SAM）4H-SiC 雪崩光电探测器（APD）结构。分析了不同外延层厚度和掺杂浓度对器件光谱响应的影响,对倍增层参数进行优化模拟,得出倍增层的最优化厚度为0.26μm,掺杂浓度为9.0×1017cm^-3。模拟分析了APD的反向IV特性、光增益、不同偏压下的光谱响应和探测率等,结果显示该APD在较低的击穿电压66.4V下可获得较高的倍增因子105;在0V偏压下峰值响应波长（250nm）处的响应度为0.11A/W,相应的量子效率为58%;临近击穿电压时,紫外可见比仍可达1.5×103;其归一化探测率最大可达1.5×1016cmHz ^1/2 W^-1。结果显示该APD具有较好的紫外探测性能。     

一种UWB雷达脉冲信号发生器的设计

介绍了UWB雷达的人体生命探测系统的工作原理,比较了几种窄脉冲产生方法的优缺点,详细分析了雪崩三极管原理,利用雪崩三极管的雪崩特性实现了超宽带雷达窄脉冲的产生。通过研究分析典型的脉冲产生电路,给出了产生人体生命探测系统的脉冲信号发生器的电路,最后由实验仿真结果可得,电路可生成脉宽为皮秒级的双极性脉冲,脉冲的峰-峰值达2...     

实弹射击训练系统的设计

实弹射击训练系统在军事训练中具有十分广泛的用途。本文设计的系统采用以光电靶为核心的判靶方案,由激光器和光敏二极管构成激光网络进行弹丸信号检测,以单片机为核心的信号处理电路对信号进行处理,得到弹着点的坐标。传统的目标靶纸放置在光电靶前,通过计算机播放动画,由投影仪投射到激光光幕靶前方的靶板上来模拟射击训练场景,供射手训练...     

探测器非线性对微波光子链路性能的影响

提出了一种新的光电探测器（PD）非线性模型,进而分析了PD非线性对系统增益及三阶无杂散动态范围（SFDR3）的影响。实验表明,当调制器的直流偏置角变化时,含PD非线性的实际链路与忽略PD非线性的理想链路相比,信号增益的最大值将下降1．7dB,SFDR3最大值下降3dB,因此在高性能链路中考虑探测器非线性是十分必要的。     

瞬变光探测系统前置放大电路的设计

光电探测器前置放大电路设计的好坏会直接影响整个检测系统的信噪比.为了提高对微弱光信号的检测精度,使用低噪声光电二极管和运算放大器,并选择光电二极管工作在光伏模式,设计出了光电探测器的低噪声前置放大电路.通过采用超前校正方法对由光电二极管结电容及运算放大器输入电容引起的相移进行补偿,克服了光电二极管寄生参数引起的转换电路...     

CMOS图像传感器钳位光敏二极管夹断电压模型研究

A novel analytical model of pinch-off voltage for CMOS image pixels with a pinned photodiode structure is proposed. The derived model takes account of the gradient doping distributions in the N buried layer due to the impurity compensation formed by manufacturing processes; the impurity distribution characteristics of two boundary PN junctions located in the region for particular spectrum response of a pinned photodiode are quantitative analyzed. By solving Poisson＇s equation in vertical barrier regions, the relationships between the pinch-off voltage and the corresponding process parameters such as peak doping concentration, N type width and doping concentration gradient of the N buried layer are established. Test results have shown that the derived model features the variations of the pinch-off voltage versus the process implant conditions more accurately than the traditional model. The research conclusions in this paper provide theoretical evidence for evaluating the pinch-off voltage design.